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dcs silicon nitride ceramic rods introductions. ... The silicon nitride material 20 can also have other uses within the MOSFET 24, for example, as an etch stop material. ... oxidation behavior, and oxidation protection are followed by chapters on production and processing, and introductions to various traditional and new fields of application.
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Get PriceProcess for etching silicon nitride selectively to silicon oxide Jul 17, 1987 - Texas Instruments Incorporated A process for etching silicon nitride which is selective to silicon oxide with a vacuum processing module which has a remote plasma, which is generated form a gas including He and SF.sub.6, introduced to the wafer face.
Get PriceWhat is claimed is: 1. A method of enhancing tensile stress in a silicon nitride film, the method comprising: depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than 400° C.; and exposing the deposited silicon nitride film to ultraviolet radiation using a source of the ultraviolet radiation, wherein the step of exposing the deposited ...
Get Price2006-4-5 · Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas.
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Get PriceMethods and apparatus for the production of high purity silicon including a fluidized bed reactor with one or more protective layers deposited on an inside surface of the fluidized bed reactor. The protective layer may be resistant to corrosion by fluidizing gases and silicon-bearing gases.
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Get PriceProcess for etching silicon nitride selectively to silicon oxide Jul 17, 1987 - Texas Instruments Incorporated A process for etching silicon nitride which is selective to silicon oxide with a vacuum processing module which has a remote plasma, which is generated form a gas including He and SF.sub.6, introduced to the wafer face.
Get PriceWhat is claimed is: 1. A method of enhancing tensile stress in a silicon nitride film, the method comprising: depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than 400° C.; and exposing the deposited silicon nitride film to ultraviolet radiation using a source of the ultraviolet radiation, wherein the step of exposing the deposited ...
Get Price2006-4-5 · Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas.
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Get Price2015-4-1 · -Ceramic nanocomposites of silicon carbide and silicon nitride with graphene and nanotubes. -Sol-gel synthesis of ultra high temperature ceramics for powders and coatings. Research Assistant
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Get PriceImplementation of Silicon Carbide (SiC-SiC) ceramic matrix composite (CMCs) components including CMC combustor in propulsion engines of interest to the US Army is now a tangible reality, representing the most fundamental change in design and manufacturing practices for gas turbine engines since the introduction of single-crystal superalloys [1].
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Get Price2015-5-22 · Reactor Operatioti Using Rogers/Heitz Wires: The use of silicon slim rods is expensive, awkward, and slow. Thus in 1964, a nonsilicon starting-rod process was developed by Leo C. Rogers and Alfred J. Heitz. In place of either intrinsic or doped silicon rods, the Rogers/Heitz method uses wires on which to grow silicon.
Get Price2005-12-30 · Preferred ceramic materials can be selected from steatite, aluminum oxide, zirconium oxide, zirconia-silica, yttria-stabilized zirconium oxide, magnesia-stabilized zirconium oxide, silicon nitride, silicon carbide, cobalt-stabilized tungsten carbide, and the like, as well as mixtures thereof.
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Get PriceImplementation of Silicon Carbide (SiC-SiC) ceramic matrix composite (CMCs) components including CMC combustor in propulsion engines of interest to the US Army is now a tangible reality, representing the most fundamental change in design and manufacturing practices for gas turbine engines since the introduction of single-crystal superalloys [1].
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Get Price2015-5-22 · Reactor Operatioti Using Rogers/Heitz Wires: The use of silicon slim rods is expensive, awkward, and slow. Thus in 1964, a nonsilicon starting-rod process was developed by Leo C. Rogers and Alfred J. Heitz. In place of either intrinsic or doped silicon rods, the Rogers/Heitz method uses wires on which to grow silicon.
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Get Price2021-5-21 · Silicon is a low-cost material platform in which it is possible to form photonic integrated circuits serving a number of applications from optical communications to sensing. For optical communications applications, e.g. short reach data communication within data centres, the optical modulator is a key component with its capabilities having a ...
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Get PriceThis goal must be achieved at a substantially lower cost and with a simpler production process than existing high-use temperature materials like preceramic polymers, ceramic matrix composites, and metal matrix composites. PHASE I: Develop a composite material system that demonstrates low cost, low processing temperature and high-use temperature.
Get Price2010-12-15 · Creep and oxidation resistance of silicon nitride/silicon carbide micro/nano composites with various rare-earth oxide sintering additives (La2O3, Y2O3, Yb2O3, Lu2O3) has been investigated. The materials were prepared by hot-pressing method and the SiC particles were produced by carbothermal reduction of SiO2 during sintering.
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